HEMTs on LEPECVD-grown virtual SiGe substrates
نویسندگان
چکیده
منابع مشابه
Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates
We show by simulation that electron mobility and velocity overshoot are greater when strained inversion layers are grown on SiGe-On-insulator substrates ~strained Si/SiGe-OI! than when unstrained silicon-on-insulator ~SOI! devices are employed. In addition, mobility in these strained inversion layers is only slightly degraded compared with strained bulk Si/SiGe inversion layers, due to the phon...
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ژورنال
عنوان ژورنال: III-Vs Review
سال: 2002
ISSN: 0961-1290
DOI: 10.1016/s0961-1290(02)85076-1